The semiclassical density - matrix theory with carrier intraband relaxation broading is des - cribed.
本文简明地描述了由载流子带内弛豫加宽的半经典的密度矩阵理论.
This phenomenon may be explained qualitatively by means of free carrier absorption.
这一现象可定性地用自由载流子吸收来解释.
The charge carriers in conducting polymers are believed to be these elementary excitations.
聚合物中的载流子就是这些元激发.
In a crystal at equilibrium a dynamic balance exists between carrier generation and recombination.
平衡晶体中载流子的产生与复合处于动态平衡之中.
Pertaining to a semiconductor device in which both majority and minority carriers are present.
用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件.
Using steady state rate equations, closed form solutions for carrier density in the active layer is deduced.
利用稳态速率方程, 导出了激光器有源区载流子密度与偏置电流及输入信号光功率关系的隐函数表达式.
Self - as spin polarons asas spinless bipolarons are assumed to be the main carriers in organic semiconductors.
假设自旋极化子和不带自旋的双极化子为有机半导体中的载流子.
Moreover, hot carriers degradation under dynamic stress and degradation in some special structured devices also presented.
此外, 文中还介绍了交流应力下的热载流子退化现象,以及在一些特殊器件结构中的退化现象.
A hybrid algorithm for solving carrier transport equations of semiconductor device is presented in this paper.
针对半导体器件模拟中载流子方程两种基本算法在高注入条件下的不足,提出了一种混合算法.
The free carrier part is exactly the famous Liouville equation which has an ana - lytical soluzion.
自由载流子部份正是著名的刘维方程,具有解析解.
Hot - carrier effect is a major reliability failure mechanism of MOS devices and circuits.
热载流子效应是影响MOS器件与电路可靠性的主要因素.
The application of the simplified Fermionic integrals reveals that the carrier concentration varies with temperature change.
利用费米积分的简化方案,揭示了载流子浓度随温度变化的规律.
The dephasing in Ge quantum dots possibly results from carrier - carrier scattering and carrier - photon scattering.
Ge量子点中的退相可能是载流子 - 载流子散射和载流子 - 声子散射共同作用的结果.
Using steady - state rate equations, closed form solutions for carrier density in the active layer is deduced.
利用稳态速率方程, 导出了激光器有源区载流子密度与偏置电流及输入信号光功率关系的隐函数表达式.
Conductivity ( electrical ) - A measurement of how easily charge carriers can flow throughout a material.
传导性 ( 电学方面 ) - 一种关于载流子通过物质难易度的测量指标.