Recently, several vendors have started to offer fully integrated, isolated, gate - drive solutions.
最近, 部分厂家开始提供全集成隔离栅极驱动解决方案.
It has insulated gate MOS devices and the ability to quickly switch.
它具有MOS器件 栅极绝缘和快速开关的能力.
Well, what if the plate also followed the grid?
然后, 如果屏级同样跟随栅极又会 怎么样 呢?
A new type power MOSFET lower on - resistance and gate charge.
新型功率MOSFET——QFET带有低通态电阻和栅极电荷.
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间.
Ones the PFC starts running the IGBT ( Q 2 ) gate supply becomes active.
当PFC开始运行时,IGBT ( Q2 ) 栅极电源变得激活.
The grid electrode is configured on the base - plate.
栅极配置于基板上.
Diode D 2 serves as a gate protection diode.
二极管D2用作栅极保护二极管.
Grid voltage is about threshold voltage, which is dependent on design of IC circuit device.
另外,栅极电压约为阈值电压, 它依赖于集成电路装置设计.
So the novelty carbon nanotube field emission display with new grid - controlled structure is successfully fabricated.
在此基础上,首次成功的制作了新型 控制栅极 结构、碳纳米管阴极场致发射显示屏.
The grid insulation layer is arranged on the base - plate and covers the grid electrode.
栅绝缘层配置于基板上以覆盖栅极.
The critical portion of the metal gate could also be the TIL itself.
金属栅极的关键部分还有TIL本身.
And the analysis is made on gate characteristics and switching process of IGBT.
介绍了全桥逆变电路的工作方式,探讨了IGBT的 栅极特性及动态开关过程.
Strange new materials appear for the first time in the gate stack of Intel's 45 - nm transistors .
新奇的材料首次出现在 intel45nm 晶体管的栅极堆叠之中.
For the problem the negative gate drive adopted , but thethe general negative charge pump circuit.
因此设计了一种简化负压栅极驱动电路, 电路简单,工作可靠.